Handbook of Semiconductor Manufacturing Technology

Forfatter: info mangler
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  • Bog, hardback
  • Engelsk

Beskrivelse

Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available.

Stay Current with the Latest Technologies

In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on…

Silicon-on-insulator (SOI) materials and devices

Supercritical CO2 in semiconductor cleaning

Low-κ dielectrics

Atomic-layer deposition

Damascene copper electroplating

Effects of terrestrial radiation on integrated circuits (ICs)

Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication.

While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

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Detaljer
  • SprogEngelsk
  • Sidetal1720
  • Udgivelsesdato09-07-2007
  • ISBN139781574446753
  • Forlag CRC Press Inc
  • FormatHardback
Størrelse og vægt
  • Vægt2572 g
  • coffee cup img
    10 cm
    book img
    17,8 cm
    25,4 cm

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    Deposition Polishing Immersion lithography Ald Atomic layer deposition Vapor Sion Sample preparation MOS device Physical Wafer PSM Dual CMP ESL Cycle Time Jeff Byers Exposure time Fab Alain C. Diebold ALD Process Andrew J. McKerrow Andreas Cangellaris Bruno W. Schueler César M. Garza chemical-mechanical Brian K. Kirkpatrick Christian Lavoie Devadas Pillai Brad VanEck Duane S. Boning damascene Dieter K. Schroder Dual Damascene Etch Rate Gabriel G. Barna gate dielectric George K. Celler Eric M. Vogel C. Rinn Cleavelin damascene copper electroplating Girish A. Dixit G. Dan Hutcheson Gregory B. Shinn Greg S. Strossman Hans-Joachim Gossmann Howard Huff John R. Hauser Drain Current Intrabay Systems Leonard Rubin Li-Qun Xia Erdogan Madenci Leonard Foster Ivan Berry Louis Breaux E.T. Ogawa Low Dielectric Constant Materials Jonathan Reid Mei Chang Michael Lamson Francois M. d'Heurle Frederick W. Kern Gautum Grover Gene E. Fuller Michael Ameen Nick Atchison Glenn W. Gale High Aspect Ratio Features Oxide Thickness Hiro Niimi Peter L. G. Ventzek Pankaj Pathak P. J. Timans planarization Semiconductor Manufacturing Technology J.W. McPherson Samuel C. Wood Shahid Rauf Shi-Li Zhang Silicon-on-insulator materials Simon Fang Stephanie Watts Butler Terry Sparks Sanjay Banerjee Thomas E. Seidel Threshold Voltage Syed A. Rizvi Strained Si semiconductor cleaning Thomas Shaffner Wafer Surface Ting Y. Tsui Wen Lin Ya-Ping Sun Will Conley Lawrence C. Wagner Mohammed J. Meziani Luigi Colombo Robert Baumann Seed Layer Vallabh H. Dhudshia Vincent Korthuis Walter Class Robert H. Havemann Ron Ross Sean Collins Short Channel Effect Sorin Cristoloveanu Stephen M. Rossnagel Sylvia Pas Wafer Fabs

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