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    Handbook of Silicon Based MEMS Materials and Technologies

    Handbook of Silicon Based MEMS Materials and Technologies

    Forfatter: info mangler
    Bog
    • Format
    • Bog, paperback
    • Engelsk

    Beskrivelse

    Handbook of Silicon Based MEMS Materials and Technologies, Third Edition is a comprehensive guide to MEMS materials, technologies, and manufacturing with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, modeling, manufacturing, processing, system integration, measurement, and materials characterization techniques of MEMS structures. The third edition of this book provides an important up-to-date overview of the current and emerging technologies in MEMS making it a key reference for MEMS professionals, engineers, and researchers alike, and at the same time an essential education material for undergraduate and graduate students.

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    Detaljer
    Størrelse og vægt
  • Vægt2670 g
    • coffee cup img
    10 cm
    book img
    21,6 cm
    27,6 cm

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    Crystallography Electrophoresis Fatigue Finite element method Gas chromatography Geometrical optics Etching Ellipsometry Diffraction Damping Electron Alignment BioMEMS Creep Deposition Accelerometers Delamination CMOS Gyroscope Density-functional theory Gas damping Crack Alignment accuracy DIC Application Specific Integrated Circuit Accelerometer Accuracy ECM Encapsulation Crystalline Chemical Mechanical Polishing Failure analysis Finite Element Simulation Failure mechanisms ASIC CVD Gettering Faceting Dicing Anodic Bonding Autodoping and epi–poly process Blade dicing BSOI Casimir–Lifshitz force Anisotropic etching Bonded SOI wafers Codoping Blister tests BMDs Bond Strength Curvature measurement Bosch process Bond chamber Direct bonding Bulk Micromachining Doping species Crystal defects Crystal-growing process Coefficient of thermal expansion Donor killing Double cantilever beam method Deep reactive-ion etching (DRIE) Edge grinding Electromechanical functionalities Capping wafer Diamond scribe chemical etching Etch stop layers Dopants and piezoresistive effect Doping effects Dislocations and solitons Electrostatic coupling Dynamic displacement Fan-out wafer-level packaging Electromagnetic optics Closed-loop architectures Frequency dependency Front-end testing Gas rarefaction Electrical Resistivity Finite difference time domain Contamination and leakage Cryo-process GFA Czochralski Czochralski-grown silicon Four-point probe Getter films Hermetic sealing DRIE Epitaxial deposition Focused ion beam milling and e-beam–assisted deposition film deposition Full scale output Glass-filled through-silicon vias Glass frit bonding hermetic package

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