Strained-Si Heterostructure Field Effect Devices

- Maiti, C: Strained-Si Heterostructure Field Effect Devices

af

indgår i serie Series in Materials Science and Engineering


Strained-Si Heterostructure Field Effect Devices
  • Leveringstid 5-8 hverdage
  • Forventet levering 10-03-2021
Format:
Bog, hardback
Udgivelsesdato:
11-01-2007
Sprog:
Engelsk
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A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS.After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of biaxial strained-Si films, and the developments of the gate dielectric formation on strained-Si/SiGe heterolayers. The book also describes silicon hetero-FETs in SiGe and SiGeC material systems, MOSFET performance enhancement, and process-induced stress simulation in MOSFETs.From substrate materials and electronic properties to strained-Si/SiGe process technology and devices, the diversity of R&D activities and results presented in this book will no doubt spark further development in the field.

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Udgivelsesdato:
11-01-2007
ISBN13:
9780750309936
Vægt:
748 g
Dybde:
28 mm
Bredde:
156 mm
Højde:
234 mm
Format:
Hardback
Forfattere
Bibliotekernes beskrivelse Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices. 18 Halftones, black and white; 29 Tables, black and white; 299 Illustrations, black and white Contains 15 Hardbacks

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